Growth morphology analysis of silicon carbide thin film

Thin film quality very much depends on various deposition parameters as well as the substrate preparation. Growth defects, impurities and non stoichiometric phases can inhibit smooth film growth.

 5x5µm image, z-range: 110 nm

The image shows a silicon carbide thin film surface deposited on a silicon wafer. The AFM is used to investigate the deposition success in order to optimize the thin film deposition and substrate preparation process. The measurement was done in "Dynamic Force" operating mode.

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