Atomic structure of a TiS2 surface

With the easyScan STM synthetic TiS2 single crystals have been investigated. On the 'as grown' material holes are observed on a large scan size.

Closer examination (cross section) reveals that the depth of the holes amounts to about 4 Angstroem which corresponds to a single atomic layer.

The STM experiments were performed under ambient conditions using mechanically prepared Pt-Ir tips. Typical tunneling parameters of 3.8 nA tunneling current and 180 mV GapVoltage were applied.

5x5nm image; z-range 0.2nm

STM measurements on TiS2 single crystal (raw data)

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